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Electrochemical Memory with Internal Boundary Layer(带有内部边界层的电化储存器)
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发布时间:2013/5/6来源:本站 我要咨询 T:
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项目名称: Electrochemical Memory with Internal Boundary Layer(带有内部边界层的电化储存器)

编号: 06-168
类别: Semiconductor/Memories

项目描述: 
Researchers in Prof. Paul McIntyre's laboratory have developed a novel memory element to reliably retain data in electrochemical (non-volatile resistance change) memories using solid state electrolytes with very high ion mobility. This approach utilizes an internal potential barrier with voltage dependent barrier height. The barrier acts to prevent the redistribution of ions (and therefore the loss of stored information) at small voltages or zero power conditions (i.e. read or non-volatile memory operations). At large voltages (write or erase operations) the barrier is reduced to allow the flow of ions. In this way, fast programming/erase times can be combined with long term data retention. This approach can be applied to a wide variety of materials. Electrochemical memory using this technology has the potential to supersede FLASH memory for applications such as computers, cell phones, memory sticks, personal digital assistants (PDAs) and digital cameras.
The McIntyre Lab has developed another technology, "Electrochemical Memory with Active Heater", that can also be used to optimize the performance of resistance change memories. This is described in Stanford Docket S06-169.
适用:
Non-volatile memory for:
  o computers
  o cell phones
  o memory sticks & external drives
  o PDAs
  o digital cameras
优势:
  • Reliable memory - motion of ions is drastically reduced at low voltage, to prevent information loss over time
  • Fast programming - uses solid state electrolytes with very high ion mobility
  • Tailored resistance in the on and off state
  • Improved cycling endurance in read operation
  • Extended temperature range
权利状况: Issued: 8,058,643 (USA)
项目联系方式:0755-86674700, 电子邮箱:ss@sotcbb.com

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